Educational guide 2023_24
Escola de Enxeñaría de Telecomunicación
Grado en Ingeniería de Tecnologías de Telecomunicación
 Subjects
  Microelectronics Design
   Contents
Topic Sub-topic
Chapter 1: Introduction (1h) Course introduction. Purposes and planning of the course. Basic concepts in the design of integrated circuits (ICs) and micro-electro-mechanical systems (MEMs).
Chapter 2: Fabrication steps for ICs and MEMs (2h) Introduction to ICs and MEMs fabrication. Planar technology. Micromachining and micromolding technologies. CMOS IC fabrication steps. Structure of MOS transistors. Fabrication example: CMOS inverter. Layout. MEMs fabrication steps: bulk micromachining, surface micromachining, and LIGA.
Chapter 3. ICs and MEMs fabrication processes (3h) Silicon wafers. Epitaxial layers. Dielectric layers. Oxidation. Deposition. Semiconductor layers. Dopant diffusion. Ion implantation. Photolithography. Etching. Metalization.
Chapter 4. Modeling of MOS transistors (3h). MOS transistors: analytical model. Higher-order effects. Fundamentals of Spice modeling and simulatin. Spice models of MOS transistors.
Chapter 5. Physical structure of basic elements (2h) Specification of the physical structure of a MOS transistor. Specification of the physical structure of a resistor. Specification of the physical structure of a capacitor. Types of physical specifications. Influence of physical design in the behavior of a device. Design rules. Design methodologies and tools.
Chapter 6. Resistor layout strategies (1h) Lateral diffusion. Effective geometric dimensions. Influence of the terminals. Long resistors. Unit resistors. Stacked resistors. Neighborhood effects. Dummies. Interdigited and common centroid structures.
Chapter 7. Capacitor layout strategies (1h) Oxide thickness gradient, lateral diffusion, and neighborhood effects. Area and perimeter unit capacitances.
Chapter 8. Transistor layout strategies (2h) Transistor with high aspect ratio. Stacked transistors. Interdigited structures.
Chapter 9. Physical design case studies (3h) Basic current mirror. Self-biased differential amplifier.
Lab assignment 1. Introduction to IC design tools (2h) Introduction to physical design tools. Basic layout elements and individual nMOS and pMOS transistors. Design Rule Check (DRC). Predesigned elements and transistors.
Lab assignment 2. CMOS inverter (4h) Schematic design of a CMOS inverter. Corrections for symmetrical response. Simulation with capacitive loads. Layout design and DRC. Layout Versus Schematic (LVS). Post-layout simulation (without and with capacitive load). Comparison with schematic simulation.
Lab assignment 3. MOS transsitor layout strategies (2h) Layout of pMOS and nMOS transistors. Snake, stacked, and interdigited structures. Dummy structures.
Lab assignment 4. Physical design of analog functional blocks: current mirror and differential pair (3h) Layouts of a basic curent mirror and a self-biased pMOS differential amplifier.
Lab assignment 5. Passive components layout strategies (2h) Layouts of resistors and capacitors. Linear, snake, stacked and interdigited structures. Dummy structures.
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