Guia docente 2013_14
Escuela de Ingeniería de Telecomunicación
Grao en Enxeñaría de Tecnoloxías de Telecomunicación
 Subjects
  Deseño microelectrónico
   Contents
Topic Sub-topic
Chapter 1: Introduction (1h) Course introduction. Purposes and planning of the course. Basic concepts in the design of integrated circuits (ICs) and micro-electro-mechanical systems (MEMs).
Chapter 2: Fabrication steps for ICs and MEMs (2h) Introduction to ICs and MEMs fabrication. Planar technology. Micromachining and micromolding technologies. CMOS IC fabrication steps. Structure of MOS transistors. Fabrication example: CMOS inverter. Layout. MEMs fabrication steps: bulk micromachining, surface micromachining, and LIGA.
Chapter 3. ICs and MEMs fabrication processes (3h) Silicon wafers. Epitaxial layers. Dielectric layers. Oxidation. Deposition. Semiconductor layers. Dopant diffusion. Ion implantation. Photolithography. Etching. Metalization.
Chapter 4. CMOS process parameters (3h). MOS transistors: analytical model. Higher-order effects. Spice model. Technology file. Parameters of a sample CMOS process.
Chapter 5. Physical structure of basic elements (2h) Specification of the physical structure of a MOS transistor. Specification of the physical structure of a resistor. Specification of the physical structure of a capacitor. Types of physical specifications. Influence of physical design in the behavior of a device. Design rules. Design methodologies and tools.
Chapter 6. Resistor layout strategies (1h) Lateral diffusion. Effective geometric dimensions. Influence of the terminals. Long resistors. Unit resistors. Stacked resistors. Neighborhood effects. Dummies. Interdigited and common centroid structures.
Chapter 7. Capacitor layout strategies (1h) Oxide thickness gradient, lateral diffusion, and neighborhood effects. Area and perimeter unit capacitances.
Chapter 8. Transistor layout strategies (2h) Transistor with high aspect ratio. Stacked transistors. Interdigited structures.
Chapter 9. Physical design case studies (3h) Basic current mirror. Self-biased differential amplifier.
Lab assignment 1. Introduction to IC design tools (3h) Basic layout elements. Design Rule Check (DRC). Extraction. Basic layout elements from libraries.
Lab assignment 2. MOS transistors (3h) Layout of pMOS and nMOS transistors. Transistors from libraries. Snake, stacked, and interdigited structures. Dummy definition layers.
Lab assignment 3. Passive components (2h) Layouts of resistors and capacitors. Resistors and capacitors from libraries. Linear, snake, stacked and interdigited structures.
Lab assignment 4. CMOS inverter (1h) Schematic and layout of a CMOS inverter. Layout Versus Schematic (LVS). Layout extraction. Post-layout simulation.
Lab assignment 5. Current mirror (2h) Schematic and layout of a basic curent mirror with resistive load and ideal input current source. LVS. Layout extraction.
Lab assignment 6. Differential amplifier (2h) Schematic and layout of a self-biased pMOS differential amplifier. LVS. Layout extraction.
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